Normal view MARC view ISBD view

Basic semiconductor physics

By: Hamaguchi, Chihiro.
Series: Graduate texts in physics. / edited by Kurt H. Becker.Publisher: Cham Springer 2017Edition: 3rd ed.Description: xiv, 709p.ISBN: 9783319668598.Subject(s): Physics | SemiconductorsDDC classification: 537.622 | H17b3 Summary: This book presents a detailed description of basic semiconductor physics. The text covers a wide range of important phenomena in semiconductors, from the simple to the advanced. Four different methods of energy band calculations in the full band region are explained: local empirical pseudopotential, non-local pseudopotential, KP perturbation and tight-binding methods. The effective mass approximation and electron motion in a periodic potential, Boltzmann transport equation and deformation potentials used for analysis of transport properties are discussed. Further, the book examines experiments and theoretical analyses of cyclotron resonance in detail. Optical and transport properties, magneto-transport, two-dimensional electron gas transport (HEMT and MOSFET) and quantum transport are reviewed, while optical transition, electron-phonon interaction and electron mobility are also addressed. Energy and electronic structure of a quantum dot (artificial atom) are explained with the help of Slater determinants. The physics of semiconductor lasers is also described, including Einstein coefficients, stimulated emission, spontaneous emission, laser gain, double heterostructures, blue lasers, optical confinement, laser modes, and strained quantum well lasers, offering insights into the physics of various kinds of semiconductor lasers. In this third edition, energy band calculations in full band zone with spin-orbit interaction are presented, showing all the matrix elements and equipping the reader to prepare computer programs of energy band calculations. The Luttinger Hamiltonian is discussed and used to analyze the valence band structure. Numerical calculations of scattering rate, relaxation time, and mobility are presented for typical semiconductors, which are very helpful for understanding of transport. Nitrides such as GaN, InN, AlN and their ternary alloys are very important materials for the blue light emission, and high power devic es with and high frequency
List(s) this item appears in: New Arrival 2nd -8th Sep, 2019
    average rating: 0.0 (0 votes)
Item type Current location Collection Call number Status Date due Barcode Item holds
Books Books P K Kelkar Library, IIT Kanpur
General Stacks 537.622 H17b3 (Browse shelf) Available A184699
Total holds: 0

This book presents a detailed description of basic semiconductor physics. The text covers a wide range of important phenomena in semiconductors, from the simple to the advanced. Four different methods of energy band calculations in the full band region are explained: local empirical pseudopotential, non-local pseudopotential, KP perturbation and tight-binding methods. The effective mass approximation and electron motion in a periodic potential, Boltzmann transport equation and deformation potentials used for analysis of transport properties are discussed. Further, the book examines experiments and theoretical analyses of cyclotron resonance in detail. Optical and transport properties, magneto-transport, two-dimensional electron gas transport (HEMT and MOSFET) and quantum transport are reviewed, while optical transition, electron-phonon interaction and electron mobility are also addressed. Energy and electronic structure of a quantum dot (artificial atom) are explained with the help of Slater determinants. The physics of semiconductor lasers is also described, including Einstein coefficients, stimulated emission, spontaneous emission, laser gain, double heterostructures, blue lasers, optical confinement, laser modes, and strained quantum well lasers, offering insights into the physics of various kinds of semiconductor lasers. In this third edition, energy band calculations in full band zone with spin-orbit interaction are presented, showing all the matrix elements and equipping the reader to prepare computer programs of energy band calculations. The Luttinger Hamiltonian is discussed and used to analyze the valence band structure. Numerical calculations of scattering rate, relaxation time, and mobility are presented for typical semiconductors, which are very helpful for understanding of transport. Nitrides such as GaN, InN, AlN and their ternary alloys are very important materials for the blue light emission, and high power devic es with and high frequency

There are no comments for this item.

Log in to your account to post a comment.

Powered by Koha